pnp tip36-a-b-c 04/10/2012 comset semiconductors 1 | 4 semiconductors silicon power transistors they are pnp power transistors mounted in jedec to-3pn. they are intended for use in general purpose power amplifier and switching applications. npn complements are tip35-a-b-c compliance to rohs. absolute maximum ratings symbol ratings value unit v cbo collector-base voltage tip36 -40 v tip36a -60 tip36b -80 TIP36C -100 v ceo collector-emitter voltage tip36 -40 v tip36a -60 tip36b -80 TIP36C -100 v ebo emitter-base voltage tip36 -5 v tip36a tip36b TIP36C i c collector current tip36 -25 a tip36a tip36b TIP36C i cm collector peak current tip36 -40 a tip36a tip36b TIP36C
pnp tip36-a-b-c 04/10/2012 comset semiconductors 2 | 4 semiconductors absolute maximum ratings symbol ratings value unit i b base current tip36 -5 a tip36a tip36b TIP36C p c power dissipation @ t c < 25 tip36 125 watts tip36a tip36b TIP36C @ t a < 25 tip36 3.5 tip36a tip36b TIP36C t j junction temperature tip36 150 c tip36a tip36b TIP36C t s storage temperature range tip36 -65 to +150 tip36a tip36b TIP36C thermal characteristics symbol ratings value unit r thj-mb from junction to mounting base tip36 1 c/w tip36a tip36b TIP36C r thj-a from junction to ambient in free air tip36 35.7 c/w tip36a tip36b TIP36C
pnp tip36-a-b-c 04/10/2012 comset semiconductors 3 | 4 semiconductors electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ max unit i ces collector cutoff current i e = 0, v ce = -v ceo tip36 - - -0.7 ma tip36a tip36b TIP36C i ceo collector cutoff current i b = 0, v ce = -30v tip36 - - -1 ma tip36a i b = 0, v ce = -60v tip36b - - -1 TIP36C i ebo emitter cutoff current v eb = -5 v, i c = 0 tip36 - - -1 ma tip36a tip36b TIP36C v ceo collector-emitter breakdown voltage (*) i c = -30 ma, i b = 0 tip36 -40 - - v tip36a -60 - - tip36b -80 - - TIP36C -100 - - v ce(sat) collector-emitter saturation voltage (*) i c = -15 a, i b = -1.5 a tip36 - - -1.8 v tip36a tip36b TIP36C i c = -25 a, i b = -5 a tip36 - - -4 v tip36a tip36b TIP36C v be(on) base-emitter voltage (*) i c = -15 a, v ce = -4 v tip36 - - -2 v tip36a tip36b TIP36C i c = -25 a, v ce = -4 v tip36 - - -4 v tip36a tip36b TIP36C h fe dc current gain (*) v ce = -4 v, i c = -1.5 a tip36 25 - - - tip36a tip36b TIP36C v ce = -4 v, i c = -15 a tip36 15 - 75 tip36a tip36b TIP36C (*) pulse width 300 s, duty cycle 2.0%
pnp tip36-a-b-c 04/10/2012 comset semiconductors 4 | 4 semiconductors symbol ratings test condition(s) min typ mx unit f t current gain-bandwidth product v ce = -10 v, i c = -10 a, f= 1khz tip36 3 - - mhz tip36a tip36b TIP36C mechanical data case to3pn n on isolated plastic package september 2012 ????????? ? information furnished is believed to be accurate and reliable. ho wever, comset semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or ot her rights of third parties which may results from its use. da ta are subject to change without notice. co mset semiconductors makes no warranty, representation or guarantee re garding the suitability of its products for any particular purpose, nor does comset semicond uctors assume any liability aris ing out of the application or us e of any product and specifica lly disclaims any and all liability, including without limitation consequential or in cidental damages. comset semiconductors? products are not au thorized for use as critical components in life support devices or systems. ? ? www.comsetsemi.com info@comsetsemi.com dimensions (mm) min. max. a 15.20 1600 b 1.90 2.10 c 4.60 5.00 d 3.10 3.30 e 9.60 f 2.00 g 0.35 0.55 h 1.40 j 5.35 5.55 k 20.00 l 19.60 20.20 m 0.95 1.25 n 2.00 o 3.00 p 4.00 r 4.00 s 1.80 t 4.80 5.20 pin 1 : base pin 2 : collector pin 3 : emitter case : collector
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